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Bourns Announces the Expansion of its IGBT Discrete Model BID Series Solution

INSULATED GATE BIPOLAR TRANSISTORS ( IGBTs)




Riverside, California – February 2, 2024 – The Bourns® IGBT discrete Model BID Series combines technology from a MOSgate and a bipolar transistor, creating an ideal component for high voltage and high current applications. These devices use advanced Trench-Gate Field-Stop technology, providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.


These Bourns® IGBT products are suitable designs for Switched-Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS) and Power Factor Correction (PFC) applications.





Features

  • Novel trench-gate field-stop technology

  • Optimized for conduction

  • Maximum operating Tj = +175 °C

  • RoHS compliant*



Applications

  • Switched-Mode Power Supplies (SMPS)

  • Uninterruptible Power Supplies (UPS)

  • Power Factor Correction (PFC)

  • Inverters

  • Welding converters

  • Photovoltaic




* RoHS Directive 2015/863, Mar 31, 2015 and Annex.







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