INSULATED GATE BIPOLAR TRANSISTORS ( IGBTs)
Riverside, California – February 2, 2024 – The Bourns® IGBT discrete Model BID Series combines technology from a MOSgate and a bipolar transistor, creating an ideal component for high voltage and high current applications. These devices use advanced Trench-Gate Field-Stop technology, providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
These Bourns® IGBT products are suitable designs for Switched-Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS) and Power Factor Correction (PFC) applications.
Features
Novel trench-gate field-stop technology
Optimized for conduction
Maximum operating Tj = +175 °C
RoHS compliant*
Applications
Switched-Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC)
Inverters
Welding converters
Photovoltaic
* RoHS Directive 2015/863, Mar 31, 2015 and Annex.