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Bourns Continues to Expand Silicon Carbide (SiC) Schottky Barrier Diode (SBD) Product Family

Model BSD Series

PRODUCT GROUP: DIODES


 

Riverside, California – September 26, 2023 – Bourns is pleased to expand its Model BSD Series Silicon Carbide (SiC) Schottky Barrier Diode (SBD) product family. These new BSD models are designed for today’s more demanding high frequency and high current applications that require increased peak forward surge capability, low forward voltage drop, reduced thermal resistance and low power loss. The advanced wide band gap components are ideal power conversion solutions to help increase reliability, switching performance and efficiency in applications such as DC-DC and AC-DC converters, Switched-Mode Power Supplies (SMPS), photovoltaic inverters, motor drives and other rectification applications.


In addition to offering 650 V and 1200 V voltage operation with currents in the 5-10 A range, the new BSD models feature no reverse recovery current to reduce EMI, enabling these SiC SBDs to significantly lower energy losses, further increasing efficiency. Providing excellent thermal performance and high power density along with various forward voltage, current and package options that include TO220-2, TO247-3, TO252, TO263 and TO247-2, the ten new BSD models give designers the higher power density necessary to match their application specifications while helping them develop smaller, state-of-the-art power electronics.


BSDD05G120E2, BSDV10G120E2, BSDH06G65E2, BSDH08G65E2, BSDD08G65E2, BSDD10G65E2, BSDW20G65C2, BSDH10S65E6, BSDB10S65E6, BSDD10S65E6



Model Number

Photo

Package

IF(AV) Max. (A)

Tj Max. (°C)

Tj Max. (°C)

VRRM Max. (V)

Qr Typ. (nC)

VF @ Tj = 25 °C, IF(av) (V)

BSDD05G120E2



TO252

5

-

175

1200

11

1.42

BSDH06G65E2



TO220-2

6

-

175

650

9

1.45

BSDH08G65E2



TO220-2

8

-

175

650

12

1.45

BSDD08G65E2



TO252

8

-

175

650

12

1.45

BSDD10G65E2

TO252

10

-

175

650

14.5

1.45

BSDW20G65C2

TO247-3

-

20

175

650

14.5

1.45

BSDH10S65E6

TO220-2

10

-

175

650

24

​1.29

BSDB10S65E6

​TO263

10

-

175

650

24

1.29

BSDD10S65E6

TO252

10

-

175

650

24

1.29

BSDV10G120E2

TO247-2

10

-

175

1200

22

1.42


Features

  • Low power loss, high efficiency

  • Low reverse leakage current

  • High peak forward surge current (IFSM)

  • Reduced EMI n No reverse recovery current

  • Reduced heat dissipation

  • Low forward voltage (VF)

  • Maximum operating temperature junction range (TJ) up to 175 °C

  • Epoxy potting compound is flame retardant to the UL 94V-0 standard

  • RoHS compliant*, Pb free and halogen free**


Applications

  • Switched-Mode Power Supplies (SMPS)

  • Power Factor Correction (PFC)

  • Photovoltaic inverters

  • DC-DC, AC-DC converters

  • Telecommunications

  • Motor drives



INTRODUCTION BRIEF


Bourns introduced its first Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) line designed to provide excellent current carrying capacity. These advanced wide band gap diodes are ideal solutions for high frequency applications such as AC-DC, DC-DC, Switched-Mode Power Supplies (SMPS), photovoltaic inverters and PC computing applications. These applications have a common requirement for high peak forward surge capability, low forward voltage drop, reduced thermal resistance and low power loss, enabling them to meet higher higher efficiency targets.


The BSD Series models are available in commercial grade in an assortment of package options to match a variety of design needs, including TO220-2, TO247-2, TO247-3, TO252, TO263 and DFN8x8.



APPLICATIONS


Offering the higher efficiency, faster switching speeds and high temperature tolerance required by a broad range of industries and applications, SiC SBDs are expected to be widely adopted in automotive, telecom, industrial, aerospace and defense, and in renewable energy markets.


The sixteen models released by Bourns target some of today’s highest volume applications such as solar inverters, motor drives, Uninterruptible Power Supplies (UPS), base stations, smart grids and other designs that demand high efficiency power conversion. Additional Bourns® SiC SBD benefits for these applications include reduced size, weight and losses that enable designers to achieve an advanced degree of system-level miniaturization.



PRODUCT OVERVIEW





*RoHS Directive 2015/863, Mar 31, 2015 and Annex.

**Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less.


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